26 April 2007 HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663611 (2007) https://doi.org/10.1117/12.742600
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off λ1/2(77K) = 4.07 μm was fabricated with good photoelectric parameters.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. V. Yakushev, M. V. Yakushev, A. A. Babenko, A. A. Babenko, V. S. Varavin, V. S. Varavin, V. V. Vasil'ev, V. V. Vasil'ev, L. V. Mironova, L. V. Mironova, D. N. Pridachin, D. N. Pridachin, V. G. Remesnik, V. G. Remesnik, I. V. Sabrinina, I. V. Sabrinina, Yu. G. Sidorov, Yu. G. Sidorov, A. O. Suslyakov, A. O. Suslyakov, } "HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663611 (26 April 2007); doi: 10.1117/12.742600; https://doi.org/10.1117/12.742600
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