26 April 2007 Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663612 (2007) https://doi.org/10.1117/12.742604
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
Results of the studies of relaxation of electhcal properties of As- and Sb-doped CdxHg1-xTe epitaxial layers, which were converted into n-type by ion milling (TM), are presented. It is demonstrated that donor complexes, which are formed under IM and are responsible for p-to-n conductivity type conversion, are not stable, and their concentration decreases upon storage even at the room temperature. The relaxation at room temperature results in electron concentration in converted layers decreasing from the initial value of ~(2-3)x 1015 cm right after the milling down to the value of ~l015 cm-3. Increasing the temperature of the storage speeds up the relaxation. The process responsible for the relaxation appeared to be the disintegration of the donor complexes, which starts after the end of the IM and is caused by the decrease in concentration of interstitial mercury atoms, generated by milling.
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I. I. Izhnin, V. V. Bogoboyashchyy, A. P. Vlasov, K. D. Mynbaev, M. Pociask, "Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663612 (26 April 2007); doi: 10.1117/12.742604; https://doi.org/10.1117/12.742604
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