26 April 2007 Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663613 (2007) https://doi.org/10.1117/12.742615
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
The dependences of electric and photoelectric parameters of the heterojunctions p-Si/Cd0.3Zn0.7S0.4Se0.6 on the thermal annealing regime are investigated. It is shown, that after thermal annealing at 400°C for τ = 6 min, a recombination rate on the interface does not almost change in a wide range of temperature. As the annealing temperature was increased from 0 to 170°C (τ= 2min), the intensity of peak in the λml = 0.593 μm wavelength region sharply increases. Upon heart treatment in air at t = 400°C for 5 ÷ 6 min, heterojunctions exhibit high photosensitivity over a wide spectral range (0.560 - 1 .38 μm). The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. The open circuit photovoltage and short circuit photocurrent density of HJ were Voc = 0.564 V, Jsc= 1 8.7 mA/cm2, respectively.
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A. Sh. Abdinov, A. Sh. Abdinov, H. M. Mamedov, H. M. Mamedov, S. I. Amirova, S. I. Amirova, "Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663613 (26 April 2007); doi: 10.1117/12.742615; https://doi.org/10.1117/12.742615
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