26 April 2007 Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663616 (2007) https://doi.org/10.1117/12.742619
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
From the point of view of its fundamental properties, solid solution Hg1-xCdxTe (0 less than or equal to x less than or equal to l) (MCT) is one of very attractive materials of infrared optoelectronics and has received considerable attention over the past forty odd years. In the early 90s, bulk growth of MCT was phased out for the routine production of first generation photo-conductive devices. But it is hard process to growth MCT single crystals with homogeneous composition. This fact determined a vital importance change in the MCT technology during the last decade which first at all induced by the mostly replacement of bulk growth by epitaxial technologies (LPE, MBE, VPE etc.).
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. K. Huseynov, E. K. Huseynov, Sh. O. Eminov, Sh. O. Eminov, A. A. Radjabli, A. A. Radjabli, N. D. Isamyilov, N. D. Isamyilov, T. I. Ibragimov, T. I. Ibragimov, } "Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663616 (26 April 2007); doi: 10.1117/12.742619; https://doi.org/10.1117/12.742619
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