26 April 2007 Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663617 (2007) https://doi.org/10.1117/12.742637
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
The active and reactive part of C-V curve of MIS structure based on MBE HgCdTe is analyzed. It's shown, that HgCdTe - Si02 confine has a surface states density equal to 2.4 1011 cm-2. This value is not depended from conductivity type and graded-band gap presence. The n-CdHgTe has surface recombination as dominant mechanism.
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V. N. Ovsyuk, V. N. Ovsyuk, A. V. Yartsev, A. V. Yartsev, } "Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663617 (26 April 2007); doi: 10.1117/12.742637; https://doi.org/10.1117/12.742637
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