24 May 2007 Peculiar properties of SiOx:In, Sn orienting films obtained by RCS method
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Proceedings Volume 6637, XV International Symposium on Advanced Display Technologies; 663708 (2007); doi: 10.1117/12.742659
Event: XV International Symposium on Advanced Display Technologies, 2006, Moscow, Russian Federation
Abstract
Technology of SiOx:In,Sn aligning films deposited by reactive cathode sputtering (RCS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by RCS method for different In, Sn concentration and by poliimid rubbing method are compared. It was shown that such aligning microrelief can create defectiess and perfect on the microscopic level nematic LC oriented structures.
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Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy, "Peculiar properties of SiOx:In, Sn orienting films obtained by RCS method", Proc. SPIE 6637, XV International Symposium on Advanced Display Technologies, 663708 (24 May 2007); doi: 10.1117/12.742659; http://dx.doi.org/10.1117/12.742659
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KEYWORDS
Tin

Liquid crystals

Silicon

Glasses

Sputter deposition

Atomic force microscopy

Microscopy

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