Peculiar properties of SiOx:In, Sn orienting films obtained by RCS method

Yu. Kolomzarov; P. Oleksenko; V. Sorokin; P. Tytarenko; R. Zelinskyy

doi:10.1117/12.742659

24 May 2007 Peculiar properties of SiO_x:In, Sn orienting films obtained by RCS method

Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy

Proceedings Volume 6637, XV International Symposium on Advanced Display Technologies; 663708 (2007) https://doi.org/10.1117/12.742659
Event: XV International Symposium on Advanced Display Technologies, 2006, Moscow, Russian Federation

Abstract

Technology of SiO_x:In,Sn aligning films deposited by reactive cathode sputtering (RCS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by RCS method for different In, Sn concentration and by poliimid rubbing method are compared. It was shown that such aligning microrelief can create defectiess and perfect on the microscopic level nematic LC oriented structures.

Citation Download Citation

Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, and R. Zelinskyy "Peculiar properties of SiO_x:In, Sn orienting films obtained by RCS method", Proc. SPIE 6637, XV International Symposium on Advanced Display Technologies, 663708 (24 May 2007); https://doi.org/10.1117/12.742659

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