28 September 2007 Organic electro-optic/silicon photonic materials and devices
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Abstract
Photonic technologies hold the promise of transformative advances in the telecommunications, aerospace, and computing industries. In particular, organic materials displaying electro-optic coefficients an order of magnitude larger than the current industry standard inorganic materials (r33 ≥ 300 pm/V) may hold the key to the development of cheap, high bandwidth, and highly integratable electro-optic devices. The pertinent linear and nonlinear optical properties of such organic second-order nonlinear optical materials are highly dependant on their dielectric properties as well as the extent of dipolar order that can be created. Here, theoretical approaches to the simulation of highly active organic electro-optic materials are described. Such simulations assist understanding and may be used to predict optical properties facilitating the rational design process. Improved ordering schemes, such as laser-assisted electric-field-poling may help in the translation of large chromophore hyperpolarizability values into large r33. Recent results also suggest that incorporation of these improved organic materials into new hybrid organic/silicon device designs may lead to dramatically reduced device operational voltages and create opportunities for the development of new device functionality.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry R. Dalton, Larry R. Dalton, Philip A. Sullivan, Philip A. Sullivan, Benjamin C. Olbricht, Benjamin C. Olbricht, Yoshi Takimoto, Yoshi Takimoto, John J. Rehr, John J. Rehr, Bruce E. Eichinger, Bruce E. Eichinger, Alok A. Mistry, Alok A. Mistry, Denise H. Bale, Denise H. Bale, Harrison Rommel, Harrison Rommel, Bruce H. Robinson, Bruce H. Robinson, } "Organic electro-optic/silicon photonic materials and devices", Proc. SPIE 6638, Photonic Metamaterials, 66380I (28 September 2007); doi: 10.1117/12.731652; https://doi.org/10.1117/12.731652
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