11 September 2007 Fabrication strategies for magnetic tunnel junctions with magnetoelectronic applications
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Abstract
In this paper, two lithographic fabrication processes for magnetic tunnel junctions (MTJs) with different mask designs and etching technologies are discussed. The advantages and disadvantages of both processes are compared. The crucial steps to protect the oxide insulating barriers and avoid side-wall redepositions (which may lead to short circuits) are developed, and important design considerations of the mask patterns and the device geometric structures are elaborated. We show that implementing the strategies developed greatly increases the successful manufacturing yield of MTJ magnetoelectronics devices.
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Philip W. T. Pong, Philip W. T. Pong, William F. Egelhoff, William F. Egelhoff, } "Fabrication strategies for magnetic tunnel junctions with magnetoelectronic applications", Proc. SPIE 6645, Nanoengineering: Fabrication, Properties, Optics, and Devices IV, 66451V (11 September 2007); doi: 10.1117/12.731140; https://doi.org/10.1117/12.731140
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