11 September 2007 Temperature dependence of Si-based thin film solar cells near phase boundary
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The temperature dependence of silicon (Si)-based thin film single junction solar cells whose intrinsic absorbers were fabricated near the phase boundary of hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (μc-Si:H) was investigated. By varying the hydrogen dilution ratio, wide bandgap protocrytalline silicon (pc-Si:H) and the mixed-phase of a-Si:H and μc-Si:H absorber layers were obtained. Photo J-V characteristics were measured under AM1.5 illumination at ambient temperature in the range of 25-75 °C. We found that the pc-Si:H solar cells which exist below the a-Si:H and µc-Si:H transition boundary exhibited the lowest temperature coefficient (TC) for conversion efficiency (η) and open-circuit voltage (Voc), while the solar cells fabricated at the mixed-phase of a-Si:H and μc-Si:H revealed a relatively high TC for η and Voc. Experimental results indicated that pc-Si:H which fabricated at the silane concentration (SC), SC = [SiH4]/([SiH4]+[H2]), of 5.75% showed the highest initial η, low TC for η and degradation ratio. This material at this condition is a promising for using as an absorber layer of single junction or top cell for tandem solar cells which operating in high temperature regions.
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Kobsak Sriprapha, Ihsanul Afdi Yunaz, Seung Yeop Myong, Akira Yamada, Makoto Konagai, "Temperature dependence of Si-based thin film solar cells near phase boundary", Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 665105 (11 September 2007); doi: 10.1117/12.733451; https://doi.org/10.1117/12.733451

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