11 September 2007 PECVD deposition of a-Si:H and μc-Si:H using a linear RF source
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ECN is aiming at the development of fabrication technology for roll-to-roll production lines for high efficiency thin film amorphous and microcrystalline silicon solar cells. The intrinsic layer will be deposited with high deposition rate microwave plasma enhanced chemical vapour deposition. This plasma source, however, is not suitable for the deposition of doped layers. Therefore, we use a novel, linear RF source for the deposition of doped layers. In this RF source, the substrate is electrically disconnected from the RF network. As a result, the ion bombardment onto the substrate is very mild, with ion energies typically < 10 eV. The low ion energies make this source very attractive for surface treatments like passivation of crystalline silicon wafers by thin SiNx or a-Si layers. In this contribution, we will introduce the novel RF source and discuss the deposition of device quality amorphous and microcrystalline intrinsic Si layers with the novel linear RF source.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bas B. Van Aken, Bas B. Van Aken, Camile Devilee, Camile Devilee, Maarten Dörenkämper, Maarten Dörenkämper, Marco Geusebroek, Marco Geusebroek, Maurits Heijna, Maurits Heijna, Jochen Löffler, Jochen Löffler, Wim J. Soppe, Wim J. Soppe, } "PECVD deposition of a-Si:H and μc-Si:H using a linear RF source", Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 66510C (11 September 2007); doi: 10.1117/12.732383; https://doi.org/10.1117/12.732383

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