PECVD deposition of a-Si:H and µc-Si:H using a linear RF source

Bas B. Van Aken; Camile Devilee; Maarten Dörenkämper; Marco Geusebroek; Maurits Heijna; Jochen Löffler; Wim J. Soppe

doi:10.1117/12.732383

11 September 2007 PECVD deposition of a-Si:H and μc-Si:H using a linear RF source

Bas B. Van Aken, Camile Devilee, Maarten Dörenkämper, Marco Geusebroek, Maurits Heijna, Jochen Löffler, Wim J. Soppe

Proceedings Volume 6651, Photovoltaic Cell and Module Technologies; 66510C (2007) https://doi.org/10.1117/12.732383
Event: Solar Energy + Applications, 2007, San Diego, California, United States

Abstract

ECN is aiming at the development of fabrication technology for roll-to-roll production lines for high efficiency thin film amorphous and microcrystalline silicon solar cells. The intrinsic layer will be deposited with high deposition rate microwave plasma enhanced chemical vapour deposition. This plasma source, however, is not suitable for the deposition of doped layers. Therefore, we use a novel, linear RF source for the deposition of doped layers. In this RF source, the substrate is electrically disconnected from the RF network. As a result, the ion bombardment onto the substrate is very mild, with ion energies typically < 10 eV. The low ion energies make this source very attractive for surface treatments like passivation of crystalline silicon wafers by thin SiN_x or a-Si layers. In this contribution, we will introduce the novel RF source and discuss the deposition of device quality amorphous and microcrystalline intrinsic Si layers with the novel linear RF source.

Citation Download Citation

Bas B. Van Aken, Camile Devilee, Maarten Dörenkämper, Marco Geusebroek, Maurits Heijna, Jochen Löffler, and Wim J. Soppe "PECVD deposition of a-Si:H and μc-Si:H using a linear RF source", Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 66510C (11 September 2007); https://doi.org/10.1117/12.732383

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