Mesophase semiconductors and the field effect transistors

Y. Shimizu; K. Oikawa; K. Nakayama; H. Monobe; T. Kimoto; K. Tsuchiya; B. Heinrich; D. Guillon; M. Yokoyama

doi:10.1117/12.734910

12 September 2007 Mesophase semiconductors and the field effect transistors

Y. Shimizu, K. Oikawa, K. Nakayama, H. Monobe, T. Kimoto, K. Tsuchiya, B. Heinrich, D. Guillon, M. Yokoyama

Author Affiliations +

Proceedings Volume 6654, Liquid Crystals XI; 66540I (2007) https://doi.org/10.1117/12.734910
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

Here we show the simple fabrication of field effect transistor (FET) with a mesophase semiconductor, a derivative of dithienyl naphthalene, which exhibits a fast mobility (10^-1 ~ 10^-2 cm² V^-1 s^-1) of charged carriers in the mesophase. The compound is a mesogen, but with highly ordered layered structure in a triclinic lattice, meaning a 3D-mesophase is formed. The device performance was studied for the transistor mobility, on/off ratio and threshold voltage of device operation, to have 0.14 cm² V^-1 s^-1, 2 x 10³ and -27 V at room temperature (in a crystal phase), respectively, even though the thin film active layer (100 nm thick) does have a multi-domain system. However, the XRD studies indicate the uniformly aligned molecules in each domain, of which long axis is inclined to be ca. 27° against the axis perpendicular to the substrate plane. This implies that a self-assembling nature of mesogenic molecules is a certain merit for thin film device fabrication in organic electronics.

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Y. Shimizu, K. Oikawa, K. Nakayama, H. Monobe, T. Kimoto, K. Tsuchiya, B. Heinrich, D. Guillon, and M. Yokoyama "Mesophase semiconductors and the field effect transistors", Proc. SPIE 6654, Liquid Crystals XI, 66540I (12 September 2007); https://doi.org/10.1117/12.734910

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