16 October 2007 A gas barrier film composed of SiO2/Al2O3 multilayers on flexible substrates
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Abstract
A gas barrier film composed of SiO2/Al2O3 multilayers on flexible PEN and PI substrates is studied. The multilayers are obtained by stacking six SiO2/Al2O3 pairs utilizing the RF sputtering, and each layer is about 60 nm in thickness. The barrier performances are further identified by the accelerated transparent Ca tests we proposed and the OLED lifetime tests. The water vapor transmission rates (WVTR) of the gas barrier films are calculated to be 5.05×10-3 at 85°C/85%RH and 9.5×10-6 at 20°C/60%RH, respectively. The decay rate in the Ca test at 85°C/85%RH is approximately 531 times faster than that at 20°C/60%RH. The half lifetime of the OLED with the multilayers gas barrier as the substrate lasts as long as the device using the glass substrate, which shows the feasibility of fabricating a thin film encapsulated OLED.
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Jung-Yu Liao, Jung-Yu Liao, Pei-Ching Liu, Pei-Ching Liu, Yu-Hsin Yeh, Yu-Hsin Yeh, Mei-Rurng Tseng, Mei-Rurng Tseng, } "A gas barrier film composed of SiO2/Al2O3 multilayers on flexible substrates", Proc. SPIE 6655, Organic Light Emitting Materials and Devices XI, 66551O (16 October 2007); doi: 10.1117/12.733500; https://doi.org/10.1117/12.733500
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