21 September 2007 Capacitance-voltage characteristics of organic thin-film transistors
Author Affiliations +
Abstract
We have fabricated pentacene-based thin film field-effect transistors and analyzed quasi-static current and capacitance measurements as a function of gate bias. The latter provides an independent and accurate estimation of the threshold voltage, an important device parameter that cannot be extracted unambiguously from the I-V measurements. The C-V characteristics of the transistors were furthermore characterized using impedance spectroscopy as a function of frequency and gate bias for the zero drain bias case. We model the impedance data with a simple transmission line equivalent circuit and find that the frequency dependence of the capacitance and phase can be described adequately from the channel conductance, as determined from quasi static current-voltage measurements, and the geometrical values of the channel and source/drain to gate electrode overlap capacitances.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. H. Gelinck, G. H. Gelinck, Erik van Veenendaal, Erik van Veenendaal, H. van der Vegte, H. van der Vegte, R. Coehoorn, R. Coehoorn, } "Capacitance-voltage characteristics of organic thin-film transistors", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 665802 (21 September 2007); doi: 10.1117/12.737252; https://doi.org/10.1117/12.737252
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

Floating gate memory paper transistor
Proceedings of SPIE (February 15 2010)
Meta-stability effects in organic based transistors
Proceedings of SPIE (September 21 2005)

Back to Top