21 September 2007 Capacitance-voltage characteristics of organic thin-film transistors
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We have fabricated pentacene-based thin film field-effect transistors and analyzed quasi-static current and capacitance measurements as a function of gate bias. The latter provides an independent and accurate estimation of the threshold voltage, an important device parameter that cannot be extracted unambiguously from the I-V measurements. The C-V characteristics of the transistors were furthermore characterized using impedance spectroscopy as a function of frequency and gate bias for the zero drain bias case. We model the impedance data with a simple transmission line equivalent circuit and find that the frequency dependence of the capacitance and phase can be described adequately from the channel conductance, as determined from quasi static current-voltage measurements, and the geometrical values of the channel and source/drain to gate electrode overlap capacitances.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. H. Gelinck, Erik van Veenendaal, H. van der Vegte, R. Coehoorn, "Capacitance-voltage characteristics of organic thin-film transistors", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 665802 (21 September 2007); doi: 10.1117/12.737252; https://doi.org/10.1117/12.737252


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