Paper
13 September 2007 High performance n-type FETs based on heterocyclic ring systems with trifluoromethylphenyl groups
Yoshiro Yamashita, Satoshi Shimono, Takahiro Kono, Daisuke Kumaki, Jun-ichi Nishida, Shizuo Tokito
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Abstract
High performance n-type FETs have been accomplished by using novel heterocyclic systems with trifluoromethylphenyl groups. To enhance intermolecular interactions, selenophene rings were introduced. Some FET devices showed higher electron mobilities than 0.1 cm2V-1s-1. The mobilities of the selenophene-containing materials were higher than those of the corresponding thiophene analogues. The relationship between the structures and FET characteristics have been investigated. The threshold voltages were reduced by introducing heterocyclic units with higher electron affinity.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiro Yamashita, Satoshi Shimono, Takahiro Kono, Daisuke Kumaki, Jun-ichi Nishida, and Shizuo Tokito "High performance n-type FETs based on heterocyclic ring systems with trifluoromethylphenyl groups", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580N (13 September 2007); https://doi.org/10.1117/12.732242
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Cited by 1 scholarly publication.
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KEYWORDS
Field effect transistors

Selenium

Crystals

Magnesium

Head-mounted displays

Bromine

Electrodes

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