High performance organic field-effect transistors using high-&Kappa; dielectrics grown by atomic layer deposition (ALD)

Xiao-Hong Zhang; Benoit Domercq; Xudong Wang; Seunghyup Yoo; Takeshi Kondo; Zhong Lin Wang; Bernard Kippelen

doi:10.1117/12.735238

21 September 2007 High performance organic field-effect transistors using high-Κ dielectrics grown by atomic layer deposition (ALD)

Xiao-Hong Zhang, Benoit Domercq, Xudong Wang, Seunghyup Yoo, Takeshi Kondo, Zhong Lin Wang, Bernard Kippelen

Author Affiliations +

Proceedings Volume 6658, Organic Field-Effect Transistors VI; 66580T (2007) https://doi.org/10.1117/12.735238
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

We report on high performance field-effect transistors fabricated with pentacene as an active material and Al₂O₃ as a gate dielectric material grown by atomic layer deposition (ALD). These transistors were operated in enhancement mode with a zero turn-on voltage and exhibited a low threshold voltage (< -10 V) as well as a low subthreshold slope (< 1 V/decade) and an on/off current ratio larger than 10⁶. Hole mobility values of 1.5 ± 0.2 cm²/Vs were obtained when using heavily n-doped silicon (n⁺-Si) as gate electrodes and substrates. Atomic force microscopy (AFM) images of pentacene films on Al₂O₃ treated with octadecyltrichlorosilane (OTS) revealed well-ordered island formation, and X-ray diffraction patterns showed characteristics of a "thin film" phase. Compared with thermally-grown SiO₂, Al₂O₃ gate insulators have lower surface trap density and higher capacitance density, to which the high performance of pentacene field-effect transistors can be attributed.

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Xiao-Hong Zhang, Benoit Domercq, Xudong Wang, Seunghyup Yoo, Takeshi Kondo, Zhong Lin Wang, and Bernard Kippelen "High performance organic field-effect transistors using high-Κ dielectrics grown by atomic layer deposition (ALD)", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580T (21 September 2007); https://doi.org/10.1117/12.735238

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