Submillimeter Wave Applications Of Submicron Schottky Diodes

Alain J. M Kreisler

doi:10.1117/12.938820

26 September 1986 Submillimeter Wave Applications Of Submicron Schottky Diodes

Alain J. M Kreisler

Author Affiliations +

Proceedings Volume 0666, Far-Infrared Science and Technology; (1986) https://doi.org/10.1117/12.938820
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada

Abstract

The interest given to GaAs Schottky diodes having small junction sizes has been continuously growing during the last decade to realize fast devices for detection, mixing, harmonic generation or sideband conversion in the terahertz domain. The studies carried out at LDIR on those devices cover both experimental and theoretical aspects. The following topics are considered here: Videodetection up to 10 THz with diodes having circular or non-circular geometries, tunable sideband generation from a laser source by using the power back radiated by a wire antenna connected to the diode, and detectormixer block development to improve the electromagnetic coupling efficiency between the submillimeter wave radiation and the antenna.

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Alain J. M Kreisler "Submillimeter Wave Applications Of Submicron Schottky Diodes", Proc. SPIE 0666, Far-Infrared Science and Technology, (26 September 1986); https://doi.org/10.1117/12.938820

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