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12 September 2007 Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS
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Abstract
Based on the advanced drift-diffusion simulator, the Crosslight APSYS, InGaAs/AlGaAs resonant cavity enhanced separate absorption charge and multiplication APDs for high bit-rate operations have been modeled. The APSYS simulator is based on drift-diffusion theory with many advanced features. Basic physical quantities like band diagram, optical absorption and generation are calculated. Performance characteristics such as dark current and photocurrent, multiplication gain, breakdown voltage, photoresponsivity, quantum efficiency, impulse response and bandwidth etc., are presented. The modeled results of multiplication gain and bandwidth are comparable to the experimental. The results are also discussed with respect to some applicable features of Crosslight APSYS.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li "Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS", Proc. SPIE 6660, Infrared Systems and Photoelectronic Technology II, 666014 (12 September 2007); https://doi.org/10.1117/12.732682
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