The design of a noble VCSEL with DOE

Tsair-Chun Liang; Sheng-Hsiung Chang; Hsi-Shan Huang

doi:10.1117/12.735299

19 September 2007 The design of a noble VCSEL with DOE

Tsair-Chun Liang; Sheng-Hsiung Chang; Hsi-Shan Huang

Author Affiliations +

Proceedings Volume 6668, Novel Optical Systems Design and Optimization X; 66680U (2007) https://doi.org/10.1117/12.735299
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

A brand-new approach in developing VCSEL lense is presented in this paper. Using the laser process or yellow light lithography process, we can merge semiconductor laser and diffraction optics elements (DOE) to become a single semiconductor optoelectronic device. To match the surface topology of the DOE with the structure of semiconductor laser, the DOE is carved on the SiO₂ layer of the vertical-cavity surface-emitting laser (VCSEL). The chiseled optoelectronic semiconductor element becomes as a DOE-VCSEL device, it has the DOE function to control the emission distribution of the emitting laser.

Citation Download Citation

Tsair-Chun Liang, Tsair-Chun Liang, Sheng-Hsiung Chang, Sheng-Hsiung Chang, Hsi-Shan Huang, Hsi-Shan Huang, } "The design of a noble VCSEL with DOE", Proc. SPIE 6668, Novel Optical Systems Design and Optimization X, 66680U (19 September 2007); doi: 10.1117/12.735299; https://doi.org/10.1117/12.735299

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