19 September 2007 The design of a noble VCSEL with DOE
Author Affiliations +
A brand-new approach in developing VCSEL lense is presented in this paper. Using the laser process or yellow light lithography process, we can merge semiconductor laser and diffraction optics elements (DOE) to become a single semiconductor optoelectronic device. To match the surface topology of the DOE with the structure of semiconductor laser, the DOE is carved on the SiO2 layer of the vertical-cavity surface-emitting laser (VCSEL). The chiseled optoelectronic semiconductor element becomes as a DOE-VCSEL device, it has the DOE function to control the emission distribution of the emitting laser.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsair-Chun Liang, Tsair-Chun Liang, Sheng-Hsiung Chang, Sheng-Hsiung Chang, Hsi-Shan Huang, Hsi-Shan Huang, } "The design of a noble VCSEL with DOE", Proc. SPIE 6668, Novel Optical Systems Design and Optimization X, 66680U (19 September 2007); doi: 10.1117/12.735299; https://doi.org/10.1117/12.735299

Back to Top