14 September 2007 Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance
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Abstract
Vertical GaN based Light Emitting Diodes on metal alloy substrate (VLEDMS) were realized and characterized for solid state lighting application. An efficiency of more than 100 lumens/watt from a white LED was achieved. And, an efficiency of more than 80 lumens/watt from a high efficiency and high power green LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs, thanks to the higher thermal conductivity of a copper alloy substrate. This increases their maximum operating current and output power and makes them more suitable for solid-state lighting applications. In addition, these VLEDMS exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.
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T. Doan, C. Tran, C. Chu, C. Chen, W. H. Liu, J. Chu, K. Yen, H. Chen, F. Fan, "Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 666903 (14 September 2007); doi: 10.1117/12.732903; https://doi.org/10.1117/12.732903
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