14 September 2007 Materials design and properties of nitride phosphors for LEDs
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Abstract
We have studied structure-property relations of Eu(II) doped nitridosilicates M2Si5N8 and MSi7N10 (M = Sr, Ba). For both systems that are described as being efficient LED phosphors, we show that a detailed examination of the local activator environment in combination with net positive charge calculations for Eu with the EHTB-MO method allows a qualitative prediction of the luminescence properties of nitridosilicate LED phosphors. The non-linear shift of the amber to red emission of solid solutions Ba2-xSrxSi5N8:Eu is explained by a non-statistical distribution of Eu over the available lattice sites. The Stokes shift differences between the two available Eu sites are significantly larger for Ba2Si5N8:Eu than for Sr2Si5N8:Eu. In contradiction to literature data, BaSi7N10:Eu shows emission in the cyan spectral region and a large Stokes shift, in accordance with the host lattice geometry and the electronic structure calculations that were carried out. SiAlON formation as an additional design tool to tune nitridosilicate phosphor emission properties is demonstrated for Sr2Si5-xAlxOxN8-x:Eu. (Al,O) incorporation leads to anisotropic changes of lattice constants and a red shift and broadening of the Eu emission.
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Peter Schmidt, Peter Schmidt, Andreas Tuecks, Andreas Tuecks, Joerg Meyer, Joerg Meyer, Helmut Bechtel, Helmut Bechtel, Detlef Wiechert, Detlef Wiechert, Regina Mueller-Mach, Regina Mueller-Mach, Gerd Mueller, Gerd Mueller, Wolfgang Schnick, Wolfgang Schnick, } "Materials design and properties of nitride phosphors for LEDs", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66690P (14 September 2007); doi: 10.1117/12.734227; https://doi.org/10.1117/12.734227
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