Paper
19 September 2007 Studies and issues of thin-GaN LED process
P. H. Chen, C. L. Lin, Y. H. Lin, P. K. Chou, C. Y. Liu
Author Affiliations +
Abstract
A newly developed thin-GaN LED structure has shown great advantages over traditional LED schemes in the lighting efficiency performance. Yet, in the fabrication process of thin-GaN LED chip, several processes still remain to be optimized. In this paper, the process issues of the promising thin-GaN LED chip will be discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. H. Chen, C. L. Lin, Y. H. Lin, P. K. Chou, and C. Y. Liu "Studies and issues of thin-GaN LED process", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66690V (19 September 2007); https://doi.org/10.1117/12.741652
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KEYWORDS
Light emitting diodes

Wafer bonding

LED lighting

Metals

Copper

Plating

Gallium nitride

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