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17 September 2007 Growth of InGaN with high indium content on ZnO based sacrificial substrates
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Abstract
ZnO has been considered as a substrate for epitaxial growth of III-Nitrides due to its close lattice and stacking order match. This paper will cover growth of InxGa1-xN epitaxial layer on lattice-matched ZnO substrates by metal-organic chemical vapor deposition (MOCVD). InGaN of various indium compositions from different growth temperatures were well controlled in the InGaN films on ZnO substrates. High-resolution X-ray diffraction (HRXRD) confirmed the epitaxial growth of InGaN film on ZnO. The optical and structural characterization of InGaN epilayer on ZnO substrates was measured by room temperature photoluminescence, temperature-dependent photoluminescence, and field-emission secondary electron microscope. In addition, a transition layer of Al2O3 on ZnO substrates have been employed for InGaN growth to help prevent Zn and O diffusion into the epilayers as well as assist nitride epilayer growth. HRXRD results show a single crystal InGaN film has been successfully grown on annealed Al2O3 coated ZnO substrates.
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Nola Li, Shen-Jie Wang, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Chris Summers, and Ian Ferguson "Growth of InGaN with high indium content on ZnO based sacrificial substrates", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66690X (17 September 2007); https://doi.org/10.1117/12.741932
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