Control Of Bistable Semiconductor Lasers

Takeshi Kamiya; Hai-Feng Liu

doi:10.1117/12.938852

14 October 1986 Control Of Bistable Semiconductor Lasers

Takeshi Kamiya, Hai-Feng Liu

Proceedings Volume 0667, Optical Chaos; (1986) https://doi.org/10.1117/12.938852
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada

Abstract

Semiconductor lasers with axially non-uniform structures are known to exhibit bistable charactreristics which can be switched by the application either of electrical or optical pulses. The paper describes the physical mechanism of the appearance of bistable characteristics in InGaAsP/InP DH lasers and gives accounts why this laser tends to bistable operation in comparison with GaAs lasers. Temperature dependence and control of hysteresis width by non-uniform pumping are also discussed.

Citation Download Citation

Takeshi Kamiya and Hai-Feng Liu "Control Of Bistable Semiconductor Lasers", Proc. SPIE 0667, Optical Chaos, (14 October 1986); https://doi.org/10.1117/12.938852

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