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26 September 2007 Dual band HEIWIP detectors with nitride materials
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Abstract
Detection of both UV and IR radiation is useful for numerous applications such as firefighting and military sensing. At present, UV and IR dual wavelength band detection requires separate detector elements. Here results are presented for a GaN/AlGaN single detector element capable of measuring both UV and IR response. The initial detector used to prove the dualband concept consists of an undoped AlGaN barrier layer between two highly doped GaN emitter/contact layers. The UV response is due to interband absorption in the AlGaN barrier region producing electron-hole pairs which are then swept out of the barrier by an applied electric field and collected at the contacts. The IR response is due to free carrier absorption in the emitters and internal photoemission over the work function at the emitter barrier interface, followed by collection at the opposite contact. The UV threshold for the initial detector was 360 nm while the IR response was in the 8-14 micron range. Optimization of the detector to improve response in both spectral ranges will be discussed. Designs capable of distinguishing the simultaneously measured UV and IR by using three contacts and separate IR and UV active regions will be presented. The same approach can be used with other material combinations to cover additional wavelength ranges, e.g. GaAs/AlGaAs NIR-FIR dual band detectors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. Unil Perera, Gamini Ariyawansa, Ranga Jayasinghe, Laura Byrum, Nikolaus Dietz, Steven G. Matsik, Ian T. Ferguson, Hui Luo, Andrew Bezinger, and Hui Chun Liu "Dual band HEIWIP detectors with nitride materials", Proc. SPIE 6678, Infrared Spaceborne Remote Sensing and Instrumentation XV, 66780S (26 September 2007); https://doi.org/10.1117/12.734731
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