Translator Disclaimer
26 September 2007 Tunable far-IR detectors/filters based on plasmons in two-dimensional electron gases in InGaAs/InP heterostructures
Author Affiliations +
Abstract
Plasmons can be generated with photons in the two dimensional electron gas (2-deg) of high electron mobility transistors (HEMTs). Because the plasmon frequency at a given wavevector depends on sheet charge density, a gate bias can tune the plasmon resonance. This effect allows a properly designed HEMT to be used as a voltage-tunable narrow-band detector or filter. This work reports on both the theory and design of such a device in the InP materials system and discusses its potential uses. By using a sub-micron grating to couple incident radiation to a high sheet charge 2-deg, a minimum detectible wavelength of roughly 26 microns is obtained. Fabrication issues, terahertz response, and tunability are discussed. Because of its small size, this novel device could find use in spaceborne remote sensing application.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. R. Buchwald, H. Saxena, and R. E. Peale "Tunable far-IR detectors/filters based on plasmons in two-dimensional electron gases in InGaAs/InP heterostructures", Proc. SPIE 6678, Infrared Spaceborne Remote Sensing and Instrumentation XV, 66780V (26 September 2007); https://doi.org/10.1117/12.729298
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top