Solid Phase Transformations During CW Laser Processing

G L Olson; J A Roth

doi:10.1117/12.938887

12 November 1986 Solid Phase Transformations During CW Laser Processing

G L Olson, J A Roth

Proceedings Volume 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering; (1986) https://doi.org/10.1117/12.938887
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada

Abstract

We review recent advances in studies of solid phase crystallization of amorphous silicon at high temperatures. The kinetics of solid phase epitaxy and random crystallization have been investigated over the temperature range from 550°C to -1350°C using cw Ar laser and flashlamp-pumped dye laser heating and time-resolved reflectivity measurements of crystallization rate. We examine the interplay between solid phase epitaxy and random crystallization in lightly doped films, and the temperature and concentration dependent competi-tion between crystallization, precipitation and phase separation in amorphous layers containing In and As at concentrations greater than 0.5 at.%.

Citation Download Citation

G L Olson and J A Roth "Solid Phase Transformations During CW Laser Processing", Proc. SPIE 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering, (12 November 1986); https://doi.org/10.1117/12.938887

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