13 September 2007 Characterizing dielectric tensors from angle-of-incidence Mueller matrix images
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Abstract
Biaxial ellipsometry is a technique that measures the dielectric tensor and thickness of a biaxial substrate, single-layer thin film, or multi-layer structure. The dielectric tensor of a biaxial material consists of the real and imaginary parts of the three orthogonal principal indices (nx+ ikx, ny+ iky and nz + ikz) and three Euler angles (Θ, Φ, Δ) to describe its orientation. The method utilized in this work measures an angle-of-incidence Mueller matrix from a Mueller matrix imaging polarimeter equipped with a pair of microscope objectives with low polarization aberrations. The dielectric tensors for multilayer samples are determined from multi-spectral angle-of-incidence Mueller matrix images in either a transmission or reflection mode using an appropriate dispersion model. Given approximate a priori knowledge of the dielectric tensor and film thickness, a Jones matrix image is first calculated by solving Maxwell's equations at each surface which is then transformed into a Mueller matrix image. An optimization algorithm then finds the best fit dielectric tensor based on matching the measured and calculated angle-of-incidence Mueller matrix images. One use for this application is to more accurately determine the dielectric tensors of biaxial films used in liquid crystal displays.
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Paula K. Smith, Paula K. Smith, Russell A. Chipman, Russell A. Chipman, } "Characterizing dielectric tensors from angle-of-incidence Mueller matrix images", Proc. SPIE 6682, Polarization Science and Remote Sensing III, 66820N (13 September 2007); doi: 10.1117/12.735335; https://doi.org/10.1117/12.735335
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