14 September 2007 Fundamental performance differences between CMOS and CCD imagers: Part II
Author Affiliations +
Abstract
A new class of CMOS imagers that compete with scientific CCDs is presented. The sensors are based on deep depletion backside illuminated technology to achieve high near infrared quantum efficiency and low pixel cross-talk. The imagers deliver very low read noise suitable for single photon counting - Fano-noise limited soft x-ray applications. Digital correlated double sampling signal processing necessary to achieve low read noise performance is analyzed and demonstrated for CMOS use. Detailed experimental data products generated by different pixel architectures (notably 3TPPD, 5TPPD and 6TPG designs) are presented including read noise, charge capacity, dynamic range, quantum efficiency, charge collection and transfer efficiency and dark current generation. Radiation damage data taken for the imagers is also reported.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Janesick, James Andrews, John Tower, Mark Grygon, Tom Elliott, John Cheng, Michael Lesser, Jeff Pinter, "Fundamental performance differences between CMOS and CCD imagers: Part II", Proc. SPIE 6690, Focal Plane Arrays for Space Telescopes III, 669003 (14 September 2007); doi: 10.1117/12.740218; https://doi.org/10.1117/12.740218
PROCEEDINGS
23 PAGES


SHARE
RELATED CONTENT


Back to Top