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17 September 2007 Back-illuminated three-dimensionally integrated CMOS image sensors for scientific applications
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Abstract
SOI-based active pixel image sensors have been built in both monolithic and vertically interconnected pixel technologies. The latter easily supports the inclusion of more complex pixel circuitry without compromising pixel fill factor. A wafer-scale back-illumination process is used to achieve 100% fill factor photodiodes. Results from 256 x 256 and 1024 x 1024 pixel arrays are presented, with discussion of dark current improvement in the differing technologies.
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Vyshnavi Suntharalingam, Dennis D. Rathman, Gregory Prigozhin, Steven Kissel, and Mark Bautz "Back-illuminated three-dimensionally integrated CMOS image sensors for scientific applications", Proc. SPIE 6690, Focal Plane Arrays for Space Telescopes III, 669009 (17 September 2007); https://doi.org/10.1117/12.739807
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