Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes and laser diodes. It
is easy to obtain strong n-type ZnO, but very difficult to create consistent, reliable, high-conductivity p-type material.
Here we present our investigations of p-type ZnO thin film preparation by sol-gel method using single Li doping and
Ga(Al)+N codoping technique. ZnO thin films with c-axis orientation have been prepared on glass substrates. Zn acetate
dihydrate, gallium nitrate and acetamide were used as zinc, gallium and nitrogen precursors respectively. SEM, X-ray
diffraction, electric conductivity and Hall effect measurements were carried out. The results show that p-type conducting
ZnO films with hole concentrations as high as 5x1017 cm-3 were obtained by this method.
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