17 September 2007 Sol-gel method of p-type zinc oxide films preparation
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Abstract
Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes and laser diodes. It is easy to obtain strong n-type ZnO, but very difficult to create consistent, reliable, high-conductivity p-type material. Here we present our investigations of p-type ZnO thin film preparation by sol-gel method using single Li doping and Ga(Al)+N codoping technique. ZnO thin films with c-axis orientation have been prepared on glass substrates. Zn acetate dihydrate, gallium nitrate and acetamide were used as zinc, gallium and nitrogen precursors respectively. SEM, X-ray diffraction, electric conductivity and Hall effect measurements were carried out. The results show that p-type conducting ZnO films with hole concentrations as high as 5x1017 cm-3 were obtained by this method.
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Armen R. Poghosyan, Armen R. Poghosyan, XiaoNan Li, XiaoNan Li, Alexandr L. Manukyan, Alexandr L. Manukyan, Stepan G. Grigoryan, Stepan G. Grigoryan, Eduard S. Vardanyan, Eduard S. Vardanyan, "Sol-gel method of p-type zinc oxide films preparation", Proc. SPIE 6698, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications, 66981D (17 September 2007); doi: 10.1117/12.734442; https://doi.org/10.1117/12.734442
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