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13 September 2007 CO2 laser-produced Sn plasma as the solution for high-volume manufacturing EUV lithography
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Abstract
We are developing a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO2 master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO2 laser driven Sn plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO2 MOPA laser system is based on commercial high power cw CO2 lasers. We have achieved an average laser power of 7 kW at 100 kHz by a single laser beam with good beam quality. In a first step, a 50-W light source is under development. Based on a 10-kW CO2 laser, this light source is scalable to more than 100 W EUV in-band power.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Endo, Tamotsu Abe, Hideo Hoshino, Yoshifumi Ueno, Masaki Nakano, Takeshi Asayama, Hiroshi Komori, Georg Soumagne, Hakaru Mizoguchi, Akira Sumitani, and Koichi Toyoda "CO2 laser-produced Sn plasma as the solution for high-volume manufacturing EUV lithography", Proc. SPIE 6703, Ultrafast X-Ray Sources and Detectors, 670309 (13 September 2007); https://doi.org/10.1117/12.732254
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