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21 September 2007 Characterization of thick layers of CdTe grown with MBE for the fabrication of radiation detectors
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Abstract
100 μm thick layers of CdTe have been grown by Molecular Beam Epitaxy (MBE) on LEC GaAs (001) substrates. The intended application for the CdTe thick films is the fabrication of radiation detectors. As recently reported extensive characterization has been performed. In this paper the results of the previous papers are being summarized, showing the potential of the CdTe films to be used as radiation detector. Furthermore first investigations on the application of the layers as radiation detectors are being presented.
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D. Greiffenberg, R. Sorgenfrei, K. H. Bachem, A Zwerger, and M. Fiederle "Characterization of thick layers of CdTe grown with MBE for the fabrication of radiation detectors", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 670604 (21 September 2007); https://doi.org/10.1117/12.737961
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