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21 September 2007 Vertical Bridgman growth of Cd1-x ZnxTe for room temperature radiation detectors
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Abstract
Low pressure Electro-Dynamic Gradient freeze (EDG) method has been used to grow compensated, high resistivity Cd(1-x)ZnxTe for x and gamma ray detectors. All growths contained excess Tellurium which is added to the growth. Ampoule design and setup to limit vapor transport was determined to be important. Ingots grown in a Pyrolitic Coated Graphite crucible are shown to provide a good response to ionizing radiation at room temperature and can be used multiple times. The highest doping levels of Aluminum are shown to improve mobility lifetime products for electrons and average 8.7x10-4 cm2/V at 0.5 μsecond shaping fitting the Hecht relation.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kelly A. Jones, Guido Ciampi, and Christie E. Skrip "Vertical Bridgman growth of Cd1-x ZnxTe for room temperature radiation detectors", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 670607 (21 September 2007); https://doi.org/10.1117/12.738674
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