15 September 2007 A proposal for high performance infrared photodetectors: effects of defect on optical absorption properties in GaN/AlGaN spherical potential
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Proceedings Volume 6717, Optomechatronic Micro/Nano Devices and Components III; 67170B (2007) https://doi.org/10.1117/12.754334
Event: International Symposium on Optomechatronic Technologies, 2007, Lausanne, Switzerland
Abstract
In this paper a novel spherical centered defect potential as a basic cell for high-performance photodetectors applicable in optical communication and other engineering tasks is proposed. The proposed structure has capability to prepare ultra high absorption coefficient and tunable wavelength. A complete analysis of the proposed structure based on the effective mass equation is done and optical intersublevel absorption of the introduced structure is investigated. Effects of the size and height of spherical potential and the width and height of defect on optical intersublevel absorption are examined. It is shown that with increasing the width and height of the introduced defect as well as the size and height of potential barrier a red shifted absorption peak is created. The magnitude of absorption peak fluctuates with the variation of dipole matrix element and occupancy of ground states and un-occupancy of excited states. The material used for the proposed structure is AlGaN/GaN.
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A. Rostami, A. Rostami, H. Rasooli, H. Rasooli, F. Janabi-Sharifi, F. Janabi-Sharifi, } "A proposal for high performance infrared photodetectors: effects of defect on optical absorption properties in GaN/AlGaN spherical potential", Proc. SPIE 6717, Optomechatronic Micro/Nano Devices and Components III, 67170B (15 September 2007); doi: 10.1117/12.754334; https://doi.org/10.1117/12.754334
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