18 December 2007 Optical damage threshold of silicon for ultrafast infrared pulses
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We present measurements of the optical damage threshold of crystalline silicon in air for ultrafast pulses in the near infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm, extending to 2260 nm. We discuss the motivation for the measurements and give theoretical context. We then describe the experimental setup, diagnostics, and procedure. The results show a breakdown threshold of 0.2 J/cm2 at 1550 nm and 1.06 ps FWHM pulse duration, and a weak dependence on wavelength.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin M. Cowan, "Optical damage threshold of silicon for ultrafast infrared pulses", Proc. SPIE 6720, Laser-Induced Damage in Optical Materials: 2007, 67201M (18 December 2007); doi: 10.1117/12.753720; https://doi.org/10.1117/12.753720


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