14 November 2007 Ferroelectric properties of multi-layer LiTaO3 thin films with Ta2O5 buffer
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67220G (2007) https://doi.org/10.1117/12.782838
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
The new sol-gel derived multi-layer LiTaO3 thin films with Ta2O5 buffer layer were prepared on Pt/Ti/SiO2/Si substrate using lithium ethoxide and tantalum ethoxide as starting materials. The sol of Ta2O5 was firstly covered on the substrate by spin coating at 6500rpm for 50s and then a rapid annealing at 650°C for 2min to form an about 20nm thick Ta2O5 buffer layer. Multi-layer LiTaO3 thin films were made over Ta2O5 buffer by repeated spin coating at 4000rpm for 30s and then a rapid annealing process at 700°C for 3min. The spectrum of XRD show the crystalline orientation of thin film type Ta2O5 is different compared to powder type Ta2O5. The SEM micrograph of the cross section shows the prepared sample is uniform, smooth and crack-free on the surface and the thickness of LiTaO3 thin film is 0.341μm. The ferroelectric hysteresis loop and leakage current of the prepared sample have been measured using Al/LiTaO3/Ta2O5/Pt structure electrode by a ferroelectric material analyzer PLC-100. The remanent polarization and coercive field of the prepared sample polarized at 13V were 3.4μC/cm2 and 185kV/cm respectively. The leakage current of the prepared sample was 2.66x10-7A at 71.43kV/cm .Experimental results show the prepared sample of LiTaO3 thin film with Ta2O5 buffer has good ferroelectric properties. Ta2O5 buffer introduction between LiTaO3 thin film and Pt substrate can effectively decrease the leakage current and improve the properties of uncooled LiTaO3 infrared device.
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De-Yin Zhang, De-Yin Zhang, Wei-Dong Peng, Wei-Dong Peng, Jin-Hua Li, Jin-Hua Li, Kun Li, Kun Li, Da-Gui Huang, Da-Gui Huang, } "Ferroelectric properties of multi-layer LiTaO3 thin films with Ta2O5 buffer", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67220G (14 November 2007); doi: 10.1117/12.782838; https://doi.org/10.1117/12.782838
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