Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD

Naiman Liao; Wei Li; Yadong Jiang; Yuejun Kuang; Kangcheng Qi; Zhiming Wu; Shibin Li

doi:10.1117/12.782992

14 November 2007 Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD

Naiman Liao, Wei Li, Yadong Jiang, Yuejun Kuang, Kangcheng Qi, Zhiming Wu, Shibin Li

Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 672219 (2007) https://doi.org/10.1117/12.782992
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

The effect of gas temperature (T_g) on surface morphology, surface roughness, photoelectrical performances of a-Si:H thin films deposited by PECVD at 250°C substrate temperature has been investigated by atomic force microscopy, spectrometric ellipsometry and semiconductor characterization system, respectively. It is found that the surface morphology and density (ρ) as well as the photoelectrical properties such as refractive index (n), dark conductivity (σ), temperature coefficient of resistance (TCR) and activation energy (E_a) remarkably depend on T_g of SiH₄ fed in reaction chamber. The higher the T_g, the larger the clusters of a-Si:H thin films deposited. Also, refractive index of a-Si:H thin films increase as T_g rises and the relationship between T_g enhancement of n and the densification of the films is observed. It is indicated that σ varies by two orders of magnitude but TCR decreases by 1.6 %/°C, and E_a gradually decreases linearly from 289.0 to 138.1 meV with T_g varying from room temperature to 160°C. The results of present study suggest that T_g in PECVD chamber plays an important role in the deposition of a-Si:H thin films and directly affects the surface morphology and photoelectrical properties of films. Control of surface morphology, photoelectrical properties of a-Si:H thin films through changing T_g can be usefully applied to the manufacturing of photoelectrical devices.

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Naiman Liao, Wei Li, Yadong Jiang, Yuejun Kuang, Kangcheng Qi, Zhiming Wu, and Shibin Li "Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 672219 (14 November 2007); https://doi.org/10.1117/12.782992

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KEYWORDS

Thin films

Thin film deposition

Plasma enhanced chemical vapor deposition

Refractive index

Atomic force microscopy

Thin film manufacturing

Plasma

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