14 November 2007 Fabrication of ZnO thin film Schottky ultraviolet photodetector
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67221W (2007) https://doi.org/10.1117/12.783033
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
ZnO films, with C-axis preferred orientation, were deposited on SiO2/n- Si by radio frequency (RF) magnetron sputtering. The interdigital metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors were fabricated by using Ag as Schottky contact metal. For comparison, ZnO Schottky diodes were also fabricated by using Ag-ZnO-Al structures. Aluminum was used to form Ohmic contacts. Current voltage (I-V) characteristics of these devices have been analyzed. The Schottky diodes exhibit distinct rectifying I-V characteristics. The barrier height of the Ag/ZnO Schottky contacts is around 0.65 eV. The leakage current for MSM photodetector is less than 6 x 10-7A at a bias of 5V. The photoresponsivity of MSM photodetector is much higher in the ultraviolet range than in the visible range. The UV/visible (350nm/500nm) rejection ratio is more than one order of magnitude. The photoresponsivity of MSM detector exhibits a maximum value around 370 nm.
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Bo Huang, Guan-nan He, Yue-bo Wu, Liang-tang Zhang, Jing Li, Dong-hui Guo, Sun-tao Wu, "Fabrication of ZnO thin film Schottky ultraviolet photodetector", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67221W (14 November 2007); doi: 10.1117/12.783033; https://doi.org/10.1117/12.783033
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