14 November 2007 Characterization of hydrogenated amorphous silicon thin films prepared by PECVD
Author Affiliations +
Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67222X (2007) https://doi.org/10.1117/12.783345
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
Amorphous silicon (a-Si:H) films are prepared on K9 glass substrate by plasma enhanced chemical vapor deposition (PECVD) and the substrate temperature varies from 150 to 300 °C. The gas phase processes of pure SiH4 in PECVD system were discussed. The change of grain size and morphology was characterized by atomic force microscope morphology (AFM). The influence of substrate temperature on the growth rate and the optical band gap of Si:H film were measured by spectra ellipsometer (SE). Scanning electron microscopy (SEM) was used to make sure the measurement of film thickness by SE.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhi-Ming Wu, Zhi-Ming Wu, Shi-Bin Li, Shi-Bin Li, Wei Li, Wei Li, Nai-Man Niao, Nai-Man Niao, Ya-Dong Jiang, Ya-Dong Jiang, Kui-Peng Zhu, Kui-Peng Zhu, } "Characterization of hydrogenated amorphous silicon thin films prepared by PECVD", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67222X (14 November 2007); doi: 10.1117/12.783345; https://doi.org/10.1117/12.783345
PROCEEDINGS
5 PAGES


SHARE
Back to Top