Paper
14 November 2007 Study on chemical mechanical polishing process of lithium niobate
Shengli Wang, Yuling Liu, Zhenxia Li
Author Affiliations +
Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67223L (2007) https://doi.org/10.1117/12.783529
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
Chemical mechanical polishing of lithium niobate wafer in alkaline slurries has been investigated. In the lithium niobate CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water. The effects of polishing plate speed, slurry flow rate, polishing pressure on removal rate in actual CMP process has been discussed in order to determine the optimum conditions for those parameters. The optimal slurry component is colloid SiO2, concentration SiO2:DW=1:1; KOH concentration 0.5~1.5% and surfactant 5~15ml/L. The process conditions are polishing plate speed 60rpm, polishing pressure 140KPa and slurry flow rate 120ml/min. The removal rate can reach 300nm/min and surface roughness is 0.21nm.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shengli Wang, Yuling Liu, and Zhenxia Li "Study on chemical mechanical polishing process of lithium niobate", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67223L (14 November 2007); https://doi.org/10.1117/12.783529
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KEYWORDS
Polishing

Chemical mechanical planarization

Surface finishing

Semiconducting wafers

Lithium niobate

Chemical reactions

Abrasives

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