14 November 2007 Low doping white phosphorescent organic light-emitting diodes
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67223Z (2007) https://doi.org/10.1117/12.783572
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
Efficient white organic light-emitting diodes (OLEDs) based on a novel phosphorescent material (t-bt)2Ir(acac) with a structure ITO/CuPc (15 nm)/NPB (15 nm)/CBP : (t-bt)2Ir(acac) (30 nm, x%)/ BCP (20 nm)/Alq (20 nm)/LiF (1 nm)/Al (100 nm) were fabricated. (t-bt)2Ir(acac) lightly doped in a host material CBP was used as a yellow emitting layer and fluorescent material NPB was used as a blue emitting layer as well as a conventional hole transporting material. Low doping concentration (1%) device showing white light emission from 6 V to 14 V has a maximum efficiency 1.6 lm/W at 8 V and a maximum luminance of 4360 cd/m2 at 13 V. High doping concentration (2% and 5%) devices emit strong yellow light under low bias and change to white light emission above 10 V bias although they show higher efficiency and luminance than 1% doping concentration device.
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Yadong Jiang, Jun Wang, Shuangling Lou, Hui Lin, Junsheng Yu, "Low doping white phosphorescent organic light-emitting diodes", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67223Z (14 November 2007); doi: 10.1117/12.783572; https://doi.org/10.1117/12.783572
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