14 November 2007 High bright blue organic light-emitting diodes based on a novel silole derivative
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 672244 (2007) https://doi.org/10.1117/12.783643
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
A high performance blue organci light-emitting diode (OLED) using a silole derivative as emitter has been fabricated by vacuum thermal evaporation method. The triple-layer device structure is indium tin oxide (ITO)/N, N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB) (50 nm)/1,2-bis(1-methyl-2,3,4,5-tetra-phenyl-1H-Silole-1-yl)ethane (BMPSiE) (40 nm)/tris (8-hydroxyquinolinolato) aluminum (Alq3) (10 nm)/Mg : Ag(100 nm 10:1), where BMPSiE was employed as an emitting layer (EML), NPB and Alq3 act as hole transporting layer (HTL) and electron transporting layer (ETL), respectively. Experimental results demonstrate that the device consisting of novel emissive material has a maximum luminance of 13500 cd/m2 and a current density of 1520 mA/cm2 at a bias voltage of 20 V.The peak of electroluminescent spectrum locates at 483 nm which well accord with the photoluminescence results. The Commissions International de l'Eclairage (CIE) coordinates locate at (0.20, 0.33), which are independent of the variation of forward bias.
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Qing Li, Qing Li, Junsheng Yu, Junsheng Yu, Lu Li, Lu Li, Yadong Jiang, Yadong Jiang, Shuangling Lou, Shuangling Lou, Xiaowei Zhan, Xiaowei Zhan, } "High bright blue organic light-emitting diodes based on a novel silole derivative", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 672244 (14 November 2007); doi: 10.1117/12.783643; https://doi.org/10.1117/12.783643
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