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14 November 2007 ZnO nanocrystalline thin films prepared by ion beam enhanced deposition method
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67224B (2007) https://doi.org/10.1117/12.783662
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
In-N codoped ZnO nanocrystalline films were prepared on Si and glass substrates by Ion beam enhanced deposition method. The In-N codoped ZnO nanocrystalline films deposited on Si substrates are found to have a preferred (002) orientation, smooth surface and high density. P-type ZnO thin films were obtained. Room temperature photoluminescence measurements indicated that the ZnO nanocrystalline films had two UV emission peaks and several visible emission peaks.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Y. Yuan, J. H. Li, Z. J. He, G. Li, and X. Q. Wang "ZnO nanocrystalline thin films prepared by ion beam enhanced deposition method", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67224B (14 November 2007); https://doi.org/10.1117/12.783662
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