14 November 2007 Hardness of CNx films deposited by MCECR plasma sputtering
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67224C (2007) https://doi.org/10.1117/12.783668
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
The CNx (carbon nitride) films were deposited on silicon (100) with Mirror-Confinement-type Electron Cyclotron Resonance (MCECR) plasma sputtering method, which sputters pure carbon target with the Ar/N2 plasma. The thickness of CNx films was about 80nm. In this paper, the hardness of CNx films was investigated, and it is measured by the nanoindenter. The technical parameters of MCECR plasma sputtering influencing the hardness of CNx films include the substrate bias, microwave power, target voltage, gas pressure, and the Ar/N2 ratio. Results shown that, the hardness of CNx films is bigger, when the substrate bias is at +30V, the microwave power is 200W, the target voltage is +500V, the gas pressure is 2×10-2Pa, and the Ar/N2 ratio is 9/1.
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Changlong Cai, Junpeng Li, Qian Mi, Weihong Ma, Yixin Yan, Haifeng Liang, "Hardness of CNx films deposited by MCECR plasma sputtering", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67224C (14 November 2007); doi: 10.1117/12.783668; https://doi.org/10.1117/12.783668
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