27 November 2007 Phase transition characteristics of tungsten and tantalum doped VO2 polycrystalline thin films formed by ion beam enhanced deposition
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Proceedings Volume 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment; 672310 (2007) https://doi.org/10.1117/12.783075
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
V2O5 and WO3 or Ta2O5 mixed powders were pressed as sputtering target. The doped vanadium oxide thin films were deposited on SiO2 substrates by a modified Ion Beam Enhanced Deposition (IBED) method. The XRD results showed that IBED polycrystalline doped VO2 films had a single <002> orientation, and the crystal lattice constant d was elongated about 0.34% and 0.24% for W- and Ta-doped films relative to un-doped VO2 power. Temperature of phase transition from semiconductor phase to metal phase was 32°C and 48°C, and the phase hysteresis was 2.1°C and 1.2°C; the resistivity change magnitude was 1.6 and 1.2 and the temperature coefficient of resistance (TCR) of the doped films at 300K was 10.1%/K and 3.4%/K for V0.97W0.03O2 and V0.97Ta0.03O2 polycrystalline films respectively. The reasons would be synthetically in consideration of many factors, such as the differences of atomic size, valence number and bond length between W and Ta. The effect of W doping was more evident than the effect of Ta-doing.
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Jinhua Li, Jinhua Li, Didi Dan, Didi Dan, Ningyi Yuan, Ningyi Yuan, Taiban Xie, Taiban Xie, } "Phase transition characteristics of tungsten and tantalum doped VO2 polycrystalline thin films formed by ion beam enhanced deposition", Proc. SPIE 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 672310 (27 November 2007); doi: 10.1117/12.783075; https://doi.org/10.1117/12.783075
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