27 November 2007 Photovoltaic effect of different thickness vanadium oxide thin film
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Proceedings Volume 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment; 672342 (2007) https://doi.org/10.1117/12.783590
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
Vanadium oxide thin films of different thickness were deposited on P (100) silicon substrates with silicon nitride thin film layer by reactive DC magnetron sputtering method. The current-voltage (I-V) curves of the samples measured in dark environment and different intensity of light environments showed that photovoltaic effect happened when the films exposed on visible light environments. Square resistance (Rs) and temperature coefficient of square resistance (TCRs) of vanadium oxide thin films were also tested in dark and light environment respectively, and the results demonstrated that the Rs was reduced and TCRs was enhanced when vanadium oxide thin films are exposed on light. Such effects changes with the variation of thickness of vanadium oxide thin films.
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Xiongbang Wei, Xiongbang Wei, Zhiming Wu, Zhiming Wu, Tao Wang, Tao Wang, Shibin Li, Shibin Li, Jingjing Tang, Jingjing Tang, Yadong Jiang, Yadong Jiang, } "Photovoltaic effect of different thickness vanadium oxide thin film", Proc. SPIE 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 672342 (27 November 2007); doi: 10.1117/12.783590; https://doi.org/10.1117/12.783590
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