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28 November 2007 Rapid nanofabrication with high density pattern with UVN30 chemically amplified resist
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Proceedings Volume 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 67240A (2007) https://doi.org/10.1117/12.782497
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
As a chemically amplified resist, UVN30 has been evaluated for mask use in high density pattern rapid fabrication by electron beam lithography. This resist displays excellent sensitivity and reasonable resolution for dense features. At optimum conditions proximity effect is eliminated and 75 nm and 150 nm dense lines resolved in a 300 nm thick film with writing field of 1mm2. With UVN30 mask, Si nanostructures are etched by non-switch DRIE etch chemistry developed in this work, which achieves high etch rate and smooth sidewall. This method is a promising technique for fast speed fabrication of nanophotonics, nanochannels and Si master stamps for nanoimprint.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xudi Wang, Yifang Chen, Zheng Cui, and Shaojun Fu D.V.M. "Rapid nanofabrication with high density pattern with UVN30 chemically amplified resist", Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67240A (28 November 2007); https://doi.org/10.1117/12.782497
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